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Products

Products Categories:
Description Application Wavelength Range Data sheet Note
GaAs Base epiwafer Visible LD 635, 650~780nm
Infrared LD 808nm, 980nm and others in 800~1064nm
Vertical Cavity Surface Emitting Laser (VCSEL); RCLED 650nm, 850nm, 850~1100nm
Double junction solar cell 670nm/870nm
Photo-detector <870nm (GaAs absorptive layer)


Description Application Wavelength Range Data sheet Note
InP Base epiwafer FP laser ~1310nm; ~1550nm;~1900nm
DFB laser 1270nm~1630nm
Avalanche photo-detector 1250nm~1600nm
Photo-detector 1250nm~1600nm/>2.0um (InGaAs absorptive layer);<1400nm (InGaAsP absorptive layer)


Description Application Wavelength Range Data sheet Note
Processed InP base epiwafer RWG DFB laser (Ridge Waveguide) 1250nm~1630nm Please contact LandMark sales for detail information Grating and overgrowth completed
BH-FP laser (Buried Heterostructure) 1250nm~1630nm Please contact LandMark sales for detail information Current blocking & P-cladding overgrowth completed
Photo-detector 1100nm~1600nm (InGaAs absorptive layer) Please contact LandMark sales for detail information Zn-diffusion completed



Wafers Under Developing
Description Application Wavelength Range Data sheet Note
Processed InP base epiwafer >10G RWG DFB laser 1250nm~1630nm Grating and overgrowth completed
BH-DFB laser (2.5G, 10G) 1250nm~1630nm Current blocking & P-cladding overgrowth completed
Avalanche photo-detector (2.5G) 1270nm~1600nm Zn-diffusion completed


Description Application Wavelength Range Data sheet Note
GaN base epiwafer Direct blue/Green LD 465nm/532nm GaN material